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APTC60DHM35T3G
Asymmetrical bridge Super Junction MOSFET Power Module
13 14 Q1 CR3
VDSS = 600V RDSon = 35m max @ Tj = 25C ID = 72A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
18
22 19
7
23
8 Q4
CR2
4
3
* * * *
29 15
30
31
32 16
R1
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 600 72 54 200 20 35 416 20 1 1800 Unit V A V m W A mJ
August, 2009 1-7 APTC60DHM35T3G - Rev 0
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC60DHM35T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = 20 V, VDS = 0V
3
Max 40 375 35 3.9 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 72A Inductive Switching @ 125C VGS = 15V VBus = 400V ID = 72A RG = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5 Min Typ 14 5.13 0.42 518 58 222 21 30 283 84 1340 1960 2192 2412 J J ns nC Max Unit nF
Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =200A/s Test Conditions VR=600V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 600 Typ Max 25 500 60 1.7 2 1.4 70 140 100 690 2.3 V ns nC
August, 2009 2-7 APTC60DHM35T3G - Rev 0
Unit V A A
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APTC60DHM35T3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS diode 4000 -40 -40 -40 2.5 Min Typ Max 0.30 0.85 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3-7
APTC60DHM35T3G - Rev 0
August, 2009
17
28
APTC60DHM35T3G
Typical CoolMOS Performance Curve
0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 0 280
VGS=15&10V 6.5V 6V 5.5V 5V 4.5V 4V
Transfert Characteristics 240 200 160 120 80 40 0 0
TJ=125C TJ=25C TJ=-55C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
ID, Drain Current (A)
5
10
15
20
25
ID, Drain Current (A)
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 120 ID, Drain Current (A) ID, DC Drain Current (A)
Normalized to VGS=10V @ 36A VGS=10V
1 2 3 4 5 6 VGS, Gate to Source Voltage (V)
7
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0
August, 2009 4-7 APTC60DHM35T3G - Rev 0
VGS=20V
25
50 75 100 125 TC, Case Temperature (C)
150
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APTC60DHM35T3G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 ID, Drain Current (A) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C)
Maximum Safe Operating Area
VGS=10V ID= 72A
100
limited by RDSon
100 s
10
Single pulse TJ=150C TC=25C
1 ms 10 ms
1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 100
August, 2009 5-7 APTC60DHM35T3G - Rev 0
ID=72A TJ=25C
VDS=120V VDS=300V VDS=480V
1000 Crss 100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
200 300 400 Gate Charge (nC)
500
600
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APTC60DHM35T3G
350 300
td(on) and td(off) (ns) Delay Times vs Current 120
td(off)
Rise and Fall times vs Current
VDS=400V RG=2.5 TJ=125C L=100H
100 tr and tf (ns) 80 60 40 20
250 200 150 100 50 0 0 20 40 60 80 100 120
ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0
VDS=400V RG=2.5 TJ=125C L=100H td(on) VDS=400V RG=2.5 TJ=125C L=100H
tf
tr
0 0 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Gate Resistance 10 Switching Energy (mJ) 8 6 4 2 0
VDS=400V ID=72A TJ=125C L=100H
Switching Energy (mJ)
Eoff Eon
Eoff
Eon
20
40 60 80 100 ID, Drain Current (A)
120
0
5
10
15
20
25
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
TJ=150C
Operating Frequency vs Drain Current 120 Frequency (kHz) 100 80 60 40 20 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A)
VDS=400V D=50% RG=2.5 TJ=125C TC=75C ZVS
ZCS
IDR, Reverse Drain Current (A)
140
100
TJ=25C
10
hard switching
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
August, 2009 6-7 APTC60DHM35T3G - Rev 0
VSD, Source to Drain Voltage (V)
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APTC60DHM35T3G
Typical diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 200 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 160 120 80
TJ=25C TJ=125C
175 150 125 100 75 50 0
Trr vs. Current Rate of Charge
TJ=125C VR=400V
120 A
30 A 60 A
40 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge
TJ=125C VR=400V
200
400 600 800 -diF/dt (A/s)
1000 1200
QRR, Reverse Recovery Charge (C)
IRRM, Reverse Recovery Current (A)
2.0
40 35 30 25 20 15 10 5 0 0
IRRM vs. Current Rate of Charge
TJ=125C VR=400V 120 A
120 A 60 A 30 A
1.5
1.0
60 A
0.5
30 A
0.0 0 200 400 600 800 1000 1200 -diF/dt (A/s)
200
400
600
800
1000 1200
-diF/dt (A/s)
DC Forward Current vs. Case Temp. 100 80 IF (A) 60 40 20 0
Duty Cycle = 0.5 TJ=175C
Capacitance vs. Reverse Voltage 500 C, Capacitance (pF) 400 300 200 100 0 1 10 100 1000 VR, Reverse Voltage (V)
25
50
75
100
125
150
175
Case Temperature (C)
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7-7
APTC60DHM35T3G - Rev 0
August, 2009

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